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| UTC 2SB1116/A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Complement to 2SD1616/A APPLICATIONS * Audio Frequency Power Amplifier * Medium Speed Switching 1 TO-92 1: Emitter 2: Collector 3: Base ABSOLUTE MAXIMUM RATINGS (Ta=25C) PARAMETER Collector-Base Voltage 2SB1116 2SB1116A Collector-Emitter Voltage 2SB1116 2SB1116A Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse)* Collector Power Dissipation Junction Temperature Storage Temperature *PW10ms,Duty Cycle50% VCEO VEBO Ic Icp Pc Tj Tstg -50 -60 -6 -1 -2 0.75 150 -55 ~ +150 V V A A W C C VCBO -60 -80 V SYMBOL RATINGS UNIT ELECTRICAL CHARACTERISTICS (Ta=25C) PARAMETER Collector Cut-off Current Emitter Cut-off current DC Current Gain* 2SB1116 2SB1116A SYMBOL ICBO IEBO hFE1 TEST CONDITIONS VCB=-60V,IE=0 VEB=-6V,Ic=0 VCE=-2V,Ic=-100mA VCE=-2V,Ic=-1A VCE=-2V,Ic=-50mA Ic=-1A,IB=-50mA Ic=-1A,IB=-50mA VCB=-10V,IE=0,f=1MHz VCE=-2V,Ic=-100mA Vcc=-10V,Ic=-100mA IB1=-IB2=-10mA VBE(off)=2 ~ 3V MIN TYP MAX -100 -100 UNIT nA nA hFE2 Base-Emitter On Voltage* VBE(on) Collector-Emitter Saturation Voltage* VCE(sat) Base-Emitter Saturation Voltage* VBE(sat) Output Capacitance Cob Current Gain Bandwidth Product fT Turn On Time tON Storage Time tSTG Fall Time tF *Pulse Test: PW350s, Duty Cycle2% 135 135 81 -600 600 400 -650 -0.2 -0.9 25 120 0.07 0.7 0.07 -700 -0.3 -1.2 mV V V pF MHz s s s 70 UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-066,A UTC 2SB1116/A CLASSIFICATION of hFE1 RANK hFE1 PNP EPITAXIAL SILICON TRANSISTOR Y 135 ~ 270 G 200 ~ 400 L 300 600 TYPICAL CHARACTERISTICS Static Characteristic -100 IB=-250A IB=-200A Static Characteristic -1.0 IB=-5.0mA IB=-4.5mA IB=-3.5mA IB=-4.0mA Collector Current, Ic (mA) -80 Collector Current, Ic (A) IB=-150A -0.8 -0.6 -0.4 -0.2 0.0 0.0 IB=-3.0mA IB=-2.5mA IB=-2.0mA -60 IB=-100A IB=-1.5mA IB=-1.0mA IB=-0.5mA -40 IB=-50A -20 0 0 -2 -4 -6 -8 -10 -0.2 -0.4 -0.6 -0.8 -1.0 Collector-Emitter Voltage, VCE (V) Collector-Emitter Voltage, VCE (V) DC Current Gain 1000 VCE=-2V -10 Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Ic=20IB DC Current Gain, hFE Saturation Voltage, VBE(sat), VCE(sat) (V) 100 -1 VBE(sat) 10 -0.1 VCE(sat) 1 -0.01 -0.1 -1 -10 -0.01 -0.01 -0.1 -1 -10 Collector Current, Ic (mA) Collector Current, Ic (A) UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R201-066,A UTC 2SB1116/A Switching Time 10 PNP EPITAXIAL SILICON TRANSISTOR Collector Output Capacitance 1000 IE=0 f=1MHz Vcc=-10V Ic=10IB1=-10IB2 Time, tON, tSTG, tF (s) 1 Capacitance, Cob (pF) tSTG 100 0.1 tF tON 10 0.01 -0.001 -0.01 -0.1 1 -1 -1 -10 -100 Collector-Base Voltage, VCB (V) Collector Current, Ic (A) Current Gain Bandwidth Product Current Gain-Bandwidth Product, T (MHz) f 1000 -10 VCE=-2V Collector Current, Ic (A) Safe Operating Area 10 m s PW =1 m s 100 -1 200ms 1 -0.01 -0.1 -1 -10 -0.01 -1 -10 Collector-Emitter Voltage, VCE (V) 2SB1116A 10 -0.1 2SB1116 DC -100 Collector Current, Ic (mA) Power Derating 0.8 0.7 Power Dissipation, Pc (W) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 175 Ambient Temperature, Ta () UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R201-066,A UTC 2SB1116/A PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R201-066,A |
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